【中文摘要】Cu(In,Ga)Se_2(简称CIGS)薄膜太阳电池是在玻璃或者其它廉价衬底上沉积6层以上化合物半导体和金属薄膜材料,薄膜总厚度约3～4微米。该电池本钱低、性能稳定、抗辐射能力强,其光电转换效率高,被称为最有前途的廉价太阳电池之一。当前CdS薄膜是CIGS薄膜太阳电池缓冲层的主要材料,但是由于其禁带宽度只有2.4eV,在短波区CIGS太阳电池中CdS缓冲层的光吸收损失大,短波区的量子效率降低。另外,在生产过程中含镉废水的排放,以及报废电池中镉的流失会对环境产生污染。因此,CIGS太阳电池的光吸收系数在短波区的进步以及无镉缓冲层CIGS太阳电池的开发成为全球CIGS太阳电池研究的热门。化学水浴法沉积的ZnS薄膜特点与CdS相似,都是具有闪锌矿和纤锌矿两种结构的N型直接带隙半导体,并且CBD法制备的ZnS材料具有比CBD法制备的CdS(2.4eV)更宽的带隙(3.7eV),从而进步了电池的短路电流密度。除此之外,Zn成份价格便宜原料充足而且对人体无害。CIGS太阳电池窗口层ZnO材料与CBD法制备的ZnS类似,更有利于P-N结的形成。因而ZnS成为取代CdS的最佳材料之一。目前效率达到19.6%的无镉CIGS/ZnS电池已有报道,但是ZnS薄膜的制备研究还很少。本论文对太阳能电池缓冲层材料——硫化锌(ZnS)的制备方法和工艺做了具体研究,并对不同实验条件下天生ZnS薄膜的结构、形貌以及光学性能进行了分析,为实现CIGS薄膜太阳电池商品化奠定了一定的基础。与此同时,在CBD制备ZnS薄膜的过程中,制备参数的改变可以实现由ZnS薄膜到ZnO薄膜的转变,从而制备出了形貌不同的ZnO薄膜并对其结构和形貌进行了分析。');
【Abstract】 The Cu(In,Ga)Se_2(CIGS)-based solar cell belongs to theⅠ-Ⅲ-Ⅵclass of thin film solar cells,which are prepared routinely on glass and other low-cost substrates. Because of its low material cost,potential scalability,and efficiencies competitive with the presently predominant crystalline-Si technology.It has shown great promise for photovoltaic applications.Nowadays,CdS has been usually used for a buffer layer of heterojunction solar cells.However,there are the losses introduced by the CdS layer in the UV range. Furthermore,CdS is carcinogenic to humans.Because of environmental issues and the losses introduced by the CdS layer in the UV range which limit the level of the optimal performances of the cells,the preparation of cadmium free buffer layers is one of the major objectives in the field of CIGS solar cells.This research has led to the investigation of ZnS as a buffer layer in ZnO/ZnS/CIGS devices.Zinc and cadmium sulphides are compound semiconductors.These materials have many similarities,both exist in cubic hexagonal and polytypical forms and are wide, direct bandgap semiconductors.ZnS is an n-type semiconductor with a wider band gap(3.7eV).Furthermore,its constituent elements are nontoxic to the human body, and are very cheap and abundant.Therefore,ZnS is very suitable for a buffer layer of heterojunction solar cells.However,there are relatively few reports of successful fabrication of heterojunction solar cells with a ZnS buffer layer.In our project,I prepared high quality ZnS thin film by a modified chemical bath deposition technique and studied the structure、su***ce morphology and optical properties.Meanwhile, during the preparation of ZnS thin films by changing the reaction conditions we can get the ZnO thin films with different suface morphology and analyse the su***ce morphology and structure of ZnO thin films.
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